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 (R)
STTH806TTI
TURBOSWITCHTM Tandem 600V ULTRA-FAST BOOST DIODE
MAJOR PRODUCTS CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) IRM (typ.) 8A 600 V (in series) 150 C 2.6 V 4A
1 2 3
1 2 3
Insulated TO-220AB FEATURES AND BENEFITS ESPECIALLY SUITED AS BOOST DIODE IN CONTINUOUS MODE POWER FACTOR CORRECTORS AND HARD SWITCHING CONDITIONS. DESIGNED FOR HIGH DI/DT OPERATION. ULTRA-FAST RECOVERY CURRENT TO COMPETE WITH GaAs DEVICES. SIZE DIMINUTION OF MOSFET AND HEATSINKS ALLOWED. INTERNAL CERAMIC INSULATED PACKAGE ALLOWS FLEXIBLE HEATSINKING ON COMMON OR SEPARATE HEATSINK. MATCHED DIODES FOR TYPICAL PFC APPLICATION WITHOUT VOLTAGE BALANCE NETWORK. INSULATED VERSION: : Insulated voltage = 2500 V(RMS) Capacitance = 7 pF DESCRIPTION The TURBOSWITCH "H" is an ultra high performance diode composed of two 300V dice in series. TURBOSWITCH "H" family drastically cuts losses in the associated MOSFET when run at high dIF/dt.
ABSOLUTE RATINGS (limiting values for both diodes in series) Symbol VRRM IF(RMS) IFSM Tstg Tj Parameter Repetitive peak reverse voltage RMS forward current Surge non repetitive forward current Storage temperature range Maximum operating junction temperature tp = 10 ms sinusoidal Value 600 14 80 -65 +150 + 150 Unit V A A C C
TM: TURBOSWITCH is a trademark of STMicroelectronics
November 1999 - Ed: 3A
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STTH806TTI
THERMAL AND POWER DATA Symbol Rth (j-c) Rth (c) Rth (j-c) P1 Junction to case thermal resistance Conduction power dissipation for both diodes Parameter Junction to case thermal resistance Test conditions Per diode Coupling Total IF(AV) = 8 A = 0.5 Tc = 80C Value 5 0.2 2.6 27 W Unit C/W
STATIC ELECTRICAL CHARACTERISTICS (for both diodes) Symbol IR * Parameter Reverse leakage current Forward voltage drop Tests Conditions VR = VRRM Tj = 25C Tj = 125C IF = 8 A Tj = 25C Tj = 125C Pulse test : * tp = 5 ms, < 2 % ** tp = 380 s, < 2% To evaluate the maximum conduction losses use the following equation : P = 1.8 x IF(AV) + 0.1 IF2(RMS) 2.1 15 Min. Typ. Max. 10 100 3.6 2.6 V Unit A
VF **
RECOVERY CHARACTERISTICS Symbol trr IF = 0.5 A IF = 1 A IRM Sfactor Tests Conditions Irr = 0.25 A dIF/dt = - 50 A/s IR = 1 A VR = 30 V Tj = 125C 4 0.4 Tj = 25C Min. Typ. 13 30 5.5 A Max. Unit ns
VR = 400 V IF = 8 A dIF/dt = -200 A/s
TURN-ON SWITCHING CHARACTERISTICS Symbol tfr VFP Tests Conditions IF = 8 A dIF/dt = 100 A/s, measured at 1.1 x VF max IF = 8 A dIF/dt = 100 A/s Tj = 25C Tj = 25C Min. Typ. Max. 200 7 Unit ns V
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STTH806TTI
Fig. 1: Conduction losses versus average current. Fig. 2: Forward voltage drop versus forward current.
IFM(A)
= 0.05 = 0.1 = 0.2 = 0.5
P1(W) 30 25 20 15 10 5 IF(av) (A) 0 0 1 2 3 4 5 6 7
=tp/T
T
100
Tj=125C Maximum values
=1
Tj=125C Typical values
10
Tj=25C Maximum values
tp
VFM(V)
10
8
9
1
0
1
2
3
4
5
6
7
8
Fig. 3: Relative variation of thermal impedance junction to case versus pulse duration.
Zth(j-c)/Rth(j-c) 1.0 0.8 0.6 0.4 0.2
= 0.5
Fig. 4: Peak reverse recovery current versus dIF/dt (90% confidence).
IRM(A) 10
VR=400V Tj=125C
IF=2*IF(av) IF=IF(av)
8 6 4
T
= 0.2 = 0.1
IF=0.5*IF(av)
Single pulse
2
tp(s) 1E-2 1E-1
=tp/T
tp
dIF/dt(A/s) 0 0 50 100 150 200 250 300 350 400 450 500
0.0 1E-3
1E+0
Fig. 5: Reverse recovery time versus dIF/dt (90% confidence).
trr(ns) 80 70 60 50 40 30 20 10 0 0 50
IF=0.5*IF(av) IF=2*IF(av) IF=IF(av)
Fig. 6: Reverse charges versus dIF/dt (90% confidence).
140 Qrr(nC)
VR=400V Tj=125C
VR=400V Tj=125C
120 100
IF=2*IF(av)
IF=IF(av)
80 60 40 20 dIF/dt(A/s) 0 0 50 100 150 200 250 300 350 400 450 500
IF=0.5*IF(av)
dIF/dt(A/s)
100 150 200 250 300 350 400 450 500
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STTH806TTI
Fig. 7: values).
S factor 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 50
dIF/dt(A/s)
IF<2xIF(av) VR=400V Tj=125C
Softness factor versus dIF/dt (typical
Fig. 8: Relative variation of dynamic parameters versus junction temperature (reference: Tj = 125C).
2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 25
S factor
IRM
Tj(C) 50 75 100 125
100 150 200 250 300 350 400 450 500
Fig. 9: Transient peak forward voltage versus dIF/dt (90% confidence).
VFP(V) 20 18 16 14 12 10 8 6 4 2 0
Fig. 10: Forward recovery time versus dIF/dt (90% confidence).
tfr(ns) 300
VFR=1.1*VF max. IF=IF(av) Tj=125C
IF=IF(av) Tj=125C
250 200 150 100
dIF/dt(A/s)
50 0 0 50
dIF/dt(A/s)
0
50
100 150 200 250 300 350 400 450 500
100 150 200 250 300 350 400 450 500
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STTH806TTI
PACKAGE MECHANICAL DATA TO-220AB
B C
b2
DIMENSIONS REF. Millimeters Inches Min. Typ. Max. Min. Typ. Max. 15.20 15.90 0.598 0.625 3.50 4.20 0.137 0.165 13.00 14.00 0.511 0.551 10.00 10.40 0.393 0.409 0.61 0.88 0.024 0.034 1.23 1.32 0.048 0.051 4.40 4.60 0.173 0.181 0.49 0.70 0.019 0.027 2.40 2.72 0.094 0.107 2.40 2.70 0.094 0.106 6.20 6.60 0.244 0.259 3.75 3.85 0.147 0.151 16.40 0.646 2.65 2.95 0.104 0.116 1.14 1.70 0.044 0.066 1.14 1.70 0.044 0.066 2.60 0.102
L F I A
l4
a1
c2
l3
l2 a2
b1 e
M c1
A a1 a2 B b1 b2 C c1 c2 e F I I4 L l2 l3 M
Ordering code STTH806TTI
Marking STTH806TTI
Package TO-220AB
Weight 2.3 g.
Base qty 50
Delivery mode Tube
Cooling method: C Recommended torque value: 0.8 N.m. Maximum torque value: 1 N.m. Epoxy meets UL94,V0
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 5/5


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